Current Conduction in Dual Channel Black Phosphorene Nanoribbon Transistor
DOI:
https://doi.org/10.11113/elektrika.v17n2.107Abstract
Phosphorene continues to fascinate research community due to its excellent physical and electrical properties. In this paper, the feasibility study of using dual conducting channel in black phosphorene nanoribbon transistor is investigated using Atomistic simulation tool. Both electronic and transport properties are evaluated. Through simulation, it is demonstrated that the conduction behavior behave differently where the current exhibit a great deal of increment when using dual channel. The performance was superior compared to single channel and suggests that the number of conducting channel is a significant factor in improving device behavior.References
A. Castellanos-Gomez, L. Vicarelli, E. Prada, J. O. Island, K. N. Acharya, S. I. Blanter, D. J. Groenendijk, M. Buscema, G. A. Steele, J. V. Alvarez, H. W. Zandbergen, J. J. Palacios, and H. S. J. Zant, “Isolation and Characterization of Few-Layer Black Phosphorusâ€, 2D Materials, vol. 1, no. 2, pp. 025001-025019, 2014.
H. Liu, A. T. Neal, Z. Zhu, D. Omanek and P. D. Ye, “Phosphorene: A New 2D Material with High Carrier Mobilityâ€, ACS Nano, vol. 8, no. 4, pp. 4033-4041, 2014.
H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D.
Tomanek and P.D. Ye, “Phosphorene: An
Unexplored 2D Semiconductor with a High Hole
Mobilityâ€, ACS Nano, vol. 8, no. 4, pp. 4033-4041,
S. Das, M. Demarteau and A. Roelofs, “Ambipolar Phosphorene Field-Effect Transistorâ€, ACS Nano, vol. 8, no. 11, pp. 11730-11738, 2014.
L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen and Y. Zhang, “Black Phosphorus Field-Effect Transistorsâ€, Nature Nanotechnology, vol. 9, no. 5, pp. 372-377, 2014.
Y. Deng, Z. Luo, N. J. Conrad, H. Liu, Y. Gong, S. Najmaei, P. M. Ajayan, J. Lou, X. Xu, and P. D. Ye, “Black Phosphorus-Monolayer MoS2 Van der Waals Heterojunction p-n Diodeâ€, ACS Nano, vol. 8, no. 8, pp. 8292-8299, 2014.
K. -T. Lam, Z. Dong, and J. Guo, “Performance Limits Projection of Black Phosphorus Field-Effect Transistorsâ€, IEEE Electron Device Letters, vol. 35, no. 9, pp. 963-965, 2014.
H. Sarvari, C. Liu, A. H. Ghayour, P. Shenavar, Z. Chen and R. Ghayour, “Atomistic quantum transport simulation of multilayer phosphorene nanoribbon field effect transistorsâ€, Physica E: Low-dimensional Systems and Nanostructures, vol. 91, pp. 161, 2017.
J. Zhang, H. J. Liu, L. Cheng, J. Wei, J. H. Liang, D. D. Fan, J. Shi, X. F. Tang and Q. J. Zhang, “Phosphorene nanoribbon as a promising candidate for thermoelectric applicationsâ€, Scientific Reports, vol. 4, pp. 4-11, 2017.
A. D. Franklin, A. Lin, H. P. S. P. Wong, Z. Chen, S. Member, and A. A. Lbg, “Current scaling in aligned carbon nanotube array transistors with local bottom gating,†IEEE Electron Device Letters, vol. 31, no. 7, pp. 644–646, 2010.
A. Hellemans, “Ring around the nanowire [news],†Spectrum, IEEE, vol. 50, no. 5, pp. 14–16, May 2013.
Atomistix ToolKit Version 14.2. QuantumWise A/S. (Available: www.quantumwise.com)
Tutorial of using the crystal builder from Quantum Wise (Available :https://docs.quantumwise.com/ tutorials/crystal_builder/crystal_builder.html)
Z. Hou and M. Yee. 2007. Electronic and Transport Properties of Graphene Nanoribbons. 7th IEEE Conference on Nanotechnology, (IEEE-NANO) Hong Kong, China. 2-5 August 2007, pp. 554-557, 2007.
A. S. Carmel, A. Pon, R. Ramesh and A. Bhattacharryya, “Calculation of electronic and transport properties phosphorene nanoribbons using DFT and semi empirical models†2017 International Conference on Microelectronic Devices, Circuits and Systems, ICMDCS 2017, pp. 1-4, 2017.
Q. Wu, L. Shen, M. Yang, Y. Cai, Z. Huang and Y. P. Feng, “Electronic and transport properties of phosphorene nanoribbonsâ€,bPhysical Review B- Condensed Matter and Materials Physics, vol. 92, no. 3, pp. 1–9, 2015.
Zaharah Johari, A. S. Azman and Razali Ismail, “Feasibility Study of Multiple Channel Armchair Graphene Nanoribbon Field Effect Transistor†40th International Conference on Micro and Nano Engineering (MNE 2014), Lausanne, Switzerland, 22-26 September 2014.
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