Finite element analysis of material removal rate for Si wafer using Heat-assisted µEDM

Authors

  • Noor Dzulaikha Daud School of Electrical Engineering, Faculty of Engineering, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor, Malaysia
  • Marwan Nafea Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, University of Nottingham Malaysia, 43500 Semenyih, Malaysia
  • Mohamed Sultan Mohamed Ali Universiti Teknologi Malaysia

Abstract

Micro-electrical discharge machining (µEDM) has been proved to produce high surface quality results in Si machining. In previous studies, the researchers reported the Si machining using the µEDM with several strategies such as plating, doping and temporary coating process to be machined by the µEDM. This paper reports a numerical simulation of MRR performance results using COMSOL Multiphysics. The effects of the machining temperature in Si machining using heat-assisted µEDM on achieving the optimum MRR results is studied. The simulation results showed the highest MRR is 1.48666 × 10-5 mm3/seconds achieved at 250 °C.

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Published

2021-09-15

How to Cite

Daud, N. D. ., Nafea, M., & Mohamed Ali, M. S. (2021). Finite element analysis of material removal rate for Si wafer using Heat-assisted µEDM. ELEKTRIKA- Journal of Electrical Engineering, 20(2-2), 15–19. Retrieved from https://elektrika.utm.my/index.php/ELEKTRIKA_Journal/article/view/301

Issue

Vol. 20 No. 2-2 (2021): Special Issue on Microelectromechanical Systems (MEMS) & Electronics

Section

Articles

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