Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon


  • Ahmad Bukhairi Md Rashid
  • Mastura Shafinaz Zainal Abidin Universiti Teknologi Malaysia
  • Shaharin Fadzli Abd Rahman
  • Amirjan Nawabjan



Electrochemical deposition, ZnO, structural, electrical


This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.




How to Cite

Md Rashid, A. B. ., Zainal Abidin, M. S., Abd Rahman, S. F. ., & Nawabjan, A. . (2021). Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon. ELEKTRIKA- Journal of Electrical Engineering, 20(3), 32–36.